Abstract

Deep reactive ion etching

Tegal 110 S/DE in Uppsala

The Tegal 110 S/DE is documented for deep silicon etching using Bosch-type processes, with silicon-oxide etching also described. Etch results depend on the pattern and material stack. A useful inquiry should state the target geometry and mask system rather than assume a recipe will transfer directly between projects.

Manufacturer
Tegal
Model
110 S/DE
Technique
Deep reactive ion etching
Location
Uppsala, Sweden

Questions to clarify for your project

  • What etch depth, openings and geometry are required?
  • What substrate and mask stack will the facility need to assess?

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Tegal 110 S/DE in Uppsala | Abstract